Mitsubishi-2

Sonderbeschaffung nur gegen Vorabrechnung lieferbar !!!

Module Lieferzeit ca.8Tage. Zur Zeit ca.15 RA.... Typen von Mitsubishi ab Lager lieferbar !!
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BILD-Anschlussbilder M-Typen

BILD-Modul-Gehäuse

RA08H1317M 135-175 MHz - 8Watt

RA08H1317M 135-175 MHz 8Watt

Frequenz-Frequenz-135-175MHzVcc 12.5 V HF- out 8W HF in 20mWGehäus H46DESCRIPTIONThe RA08H1317M is a 8-watt RF MOSFET Amplifier Modulefor 12.5-volt portable radios that operate in the 135- to 175-MHzrange.The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors. Without the gatevoltage (VGG=0V), only a small leakage current flows into thedrain and the RF input signal attenuates up to 60 dB. The outputpower and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power anddrain current increases substantially. The nominal output powerbecomes available at 3V (typical) and 3.5V (maximum). AtVGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but mayalso be used for linear modulation by setting the drain quiescentcurrent with the gate voltage and controlling the output power withthe input power.FEATURES• Enhancement-Mode MOSFET Transistors(IDD@0 @ VDD=12.5V, VGG=0V)• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW• hT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW• Broadband Frequency Range: 135-175MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V• Module Size: 30 x 10 x 5.4 mm• Linear operation is possible by setting the quiescent draincurrent with the gate voltage and controlling the output powerwith the input power

RA13H1317M 135-175MHz 13 Watt

RA13H1317M 135-175MHz 13 Watt

Frequenz-Frequenz-135-175MHzVcc 12.5 V HF- out 13 W HF in 50mWGehäus H2DESCRIPTIONThe RA13H1317M is a 13-watt RF MOSFET AmplifierModule for 12.5-volt mobile radios that operate in the 135- to175-MHz range.The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors. Without the gatevoltage (VGG=0V), only a small leakage current flows into thedrain and the RF input signal attenuates up to 60 dB. The outputpower and drain current increase as the gate voltage increases.With a gate voltage around 4V (minimum), output power anddrain current increases substantially. The nominal output powerbecomes available at 4.5V (typical) and 5V (maximum). AtVGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, butmay also be used for linear modulation by setting the drainquiescent current with the gate voltage and controlling the outputpower with the input power.FEATURES• Enhancement-Mode MOSFET Transistors(IDD@0 @ VDD=12.5V, VGG=0V)• Pout>13W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175 MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Linear operation is possible by setting the quiescent draincurrent with the gate voltage and controlling the output powerwith the input power

RA30H1317M 135-175MHz 30 Wat

RA30H1317MM 135-175MHz 30 Watt

Frequenz-Frequenz-135-175MHzVcc 12.5 V HF- out 30 W HF in 50mWGehäus H2DESCRIPTIONThe RA30H1317M is a 30-watt RF MOSFET AmplifierModule for 12.5-volt mobile radios that operate in the 135- to175-MHz range.The battery can be connected directly to the drain of theenhancement-mode MOSFET transistors. Without the gatevoltage (VGG=0V), only a small leakage current flows into thedrain and the RF input signal attenuates up to 60 dB. The outputpower and drain current increase as the gate voltage increases.With a gate voltage around 3.5V (minimum), output power anddrain current increases substantially. The nominal output powerbecomes available at 4V (typical) and 5V (maximum). At VGG=5V,the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but mayalso be used for linear modulation by setting the drain quiescentcurrent with the gate voltage and controlling the output power withthe input power.FEATURES• Enhancement-Mode MOSFET Transistors(IDD@0 @ VDD=12.5V, VGG=0V)• Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Linear operation is possible by setting the quiescent draincurrent with the gate voltage and controlling the output powerwith the input power

RA03M8894M - 889-941MHz - 3,6Watt

RA03M8894M

Freq.-Range 889-941MHzVcc - 7.2 V P out - 3.6 WP in - mW50 Gehäuse - H11 R-NR2275

LISTE-RA-Typen -1

LISTE-RA-Typen - 2